HORIBA cung cấp các detector đơn điểm cho nhiều ứng dụng khác nhau trong lĩnh vực nghiên cứu quang phổ và y sinh. Đây là những detector hoàn chỉnh bao gồm vỏ máy, bộ cấp nguồn và các trang thiết bị làm mát nếu cần. Có sẵn các detector hoạt động độc lập, hoặc kết hợp với máy đơn sắc và phổ kế, những detector này cho phép cấu hình giải pháp tùy chỉnh theo yêu cầu.
Photomultiplier Detectors
Photomultiplier Detectors |
Detector Material |
Wavelength Range (nm) |
Active Area, mm |
Dark Current (nA) |
Cooling |
Chopper & Lock-In or Modulated Source |
---|---|---|---|---|---|---|
Multialkali Photocathode |
185 to 900 |
8 x 24 |
3 |
RT or TE |
Not Required |
|
Multialkali Photocathode |
160 to 900 |
8 x 24 |
3 |
RT or TE |
Not Required |
|
Bialkali Photocathode |
185 to 650 |
8 x 24 |
0.1 |
RT or TE |
Not Required |
|
InGaAs Photocathode |
185 to 1010 |
3 x 12 |
1 |
TE |
Not Required |
1 Dual detectors consist of a silicon detector on top of a NIR detector, where the Silicon transmits wavelengths above 1 μm
RT = Room Temperature
TE = Thermoelectric cooling
LN2 = Liquid nitrogen cooling
Solid State Detectors
Solid State Detectors |
Detector Material |
Wavelength Range (μm) |
Active Area, mm |
Sensitivity (D*) |
Cooling |
Chopper & Lock-In or Modulated Source |
---|---|---|---|---|---|---|
Silicon (Si) |
0.20 to 1.10 |
2.5 mm Ǿ |
1.48E+14 |
RT |
Not Required |
|
Silicon (Si) |
0.20 to 1.00 |
2.5 mm Ǿ |
2.22E+14 |
TE |
Not Required |
|
Indium gallium arsenide (InGaAs) |
0.80 to 1.70 |
2 mm Ǿ |
3.54E+13 |
RT |
Not Required |
|
Indium gallium arsenide (InGaAs) |
0.80 to 1.65 |
2 mm Ǿ |
1.18E+14 |
TE |
Not Required |
|
Indium gallium arsenide (InGaAs) |
0.80 to 1.55 |
2 mm Ǿ |
1.77E+15 |
LN2 |
Not Required |
|
InGaAs Extended |
1.00 to 2.05 |
1 mm Ǿ |
8.86E+12 |
TE |
Recommended |
|
InGaAs Extended |
1.00 to 1.90 |
1 mm Ǿ |
4.43E+13 |
LN2 |
Recommended |
|
InGaAs Extended |
1.20 to 2.40 |
1 mm Ǿ |
1.77E+12 |
TE |
Recommended |
|
InGaAs Extended |
1.30 to 2.20 |
1 mm Ǿ |
8.86E+12 |
LN2 |
Recommended |
|
Germanium (Ge) |
0.80 to 1.80 |
2 mm Ǿ |
3.94E+12 |
RT |
Not Required |
|
Germanium (Ge) |
0.80 to 1.60 |
2 mm Ǿ |
3.54E+13 |
TE |
Not Required |
|
Germanium (Ge) |
0.80 to 1.50 |
2 mm Ǿ |
7.09E+14 |
LN2 |
Not Required |
|
Lead sulfide (PbS) |
1.00 to 2.80 |
2 x 2 |
1.00E+12 |
RT |
Required |
|
Lead sulfide (PbS) |
1.00 to 2.80 |
2 x 2 |
6.67E+12 |
TE |
Required |
|
Indium arsenide (InAs) |
1.00 to 3.50 |
2 mm Ǿ |
8.86E+09 |
RT |
Recommended |
|
Indium arsenide (InAs) |
1.00 to 3.40 |
2 mm Ǿ |
1.77E+11 |
TE |
Recommended |
|
Lead selenide (PbSe) |
1.00 to 4.50 |
2 x 2 |
2.00E+10 |
RT |
Required |
|
Lead selenide (PbSe) |
1.00 to 4.50 |
2 x 2 |
1.00E+11 |
TE |
Required |
|
Mercury cadmium telluride (HgCdTe) |
1.00 to 5.00 |
2 x 2 |
1.00E+11 |
TE |
Required |
|
Indium antimonide (InSb) |
1.00 to 5.40 |
2 mm Ǿ |
1.20E+11 |
LN2 |
Recommended |
|
Mercury cadmium telluride (HgCdTe) |
2.00 to 14.00 |
2 x 2 |
4.00E+11 |
LN2 |
Required |
|
Mercury cadmium telluride (HgCdTe) |
2.00 to 20.0 |
2 x 2 |
6.67E+10 |
LN2 |
Required |
1 Dual detectors consist of a silicon detector on top of a NIR detector, where the Silicon transmits wavelengths above 1 μm
RT = Room Temperature
TE = Thermoelectric cooling
LN2 = Liquid nitrogen cooling
Pyroelectric Detector
Pyroelectric Detector |
Detector Material |
Wavelength Range (μm) |
Active Area, mm |
Sensitivity (D*) |
Cooling |
Chopper & Lock-In or Modulated Source |
---|---|---|---|---|---|---|
Lithium tantalate (LiTaO3) |
2.00 to 16.00 |
2 mm Ǿ |
1.77E+09 |
RT |
Required |
1 Dual detectors consist of a silicon detector on top of a NIR detector, where the Silicon transmits wavelengths above 1 μm
RT = Room Temperature
TE = Thermoelectric cooling
LN2 = Liquid nitrogen cooling
Solid State Dual Detectors1
Detectors from 200 nm to 20 µm
-
Detectors Spectral Response
Đánh giá
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